Abstract

Cross-sectional transmission electron-microscopy of SixGe1-x layers grown by molecular beam epitaxy on (100) Si substrates has been used to study the role of elastic relaxation in the diffraction contrast. The elastic strains are accommodated in the SixGe1-x layers; a method is suggested to account for the surface relaxation of the stresses based on the solution of a line force acting on an elastic hair space. This leads to a long range stress relaxation, accounting for the wide anomalous strain fields observed in dark field images.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.