Abstract
The second-order elastic constants of wurtzite phase GaN have been measured with 0.2% accuracy using a resonance ultrasound method. The measurements were done on a 0.29-mm-thick GaN crystal grown by chloride vapor-phase transport and subsequently detached from the substrate. The elastic moduli in units of GPa are: c11=377, c12=160, c13=114, c33=209, and c44=81.4. The elastic moduli are used to calculate the biaxial misfit stresses expected in heteroepitaxial thin films of GaN.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
