Abstract
Ultrasonic wave transit times have been measured in n-type InP at room temperature using hydrostatic pressures up to 4 kbar. Linear pressure dependences are found for the elastic stiffness moduli implying that at the high pressure structural-electrical transition the shear-to-bulk modulus ratio (C 11−C 12) 2B has a (fractional) value which fits the modified Born criterion for stability developed by Demarest et al . The anharmonic force constants and some of the third order elastic constants are found to be smaller the higher the transition pressure for indium III-V compounds.
Published Version
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