Abstract
GaFeO 3 thin films were prepared on MgO(001), Al 2O 3(0001) and fused quartz substrates by the pulsed laser deposition technique. The lattice match mechanisms between GaFeO 3 thin films and substrates have been analyzed. Results of optical properties analysis show that the thin films have the different band gaps and optical properties. These differences can be ascribed to the different lattice strains induced by the different lattice mismatch and thermal expansion coefficients between the GaFeO 3 thin films and the substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
