Abstract
Two different techniques, namely optical absorption and X-ray diffraction, were extensively used to study arsenic antisite (As Ga ) defects in low temperature (LT) GaAs. A standard temperature and illumination cycle following the ground-tomestable and reverse transitions was employed in both experiments. Similarities between EL2 and the defects in question were found, leading to the establishment of three types of As Ga -related centres in LT GaAs. The underlying role of the strained lattice in LT GaAs layers was pointed out by the X-ray experiment.
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