Abstract
Closed-type solutions of the basic model for photoinduced metastable transformation of the EL2 centers in SI GaAs are studied. Conditions for the existence of maximum in the optical absorption α, photocapacitance C d, and electron paramagnetic resonance (EPR) transients are determined. Several methods for the estimation of the initial neutral EL2 fraction (occupancy f), and cross-section for the metastable transformation σ* from the dynamics of “fingerprint” transients are proposed, and the accompanying ready-to-use nomograms computed and presented.
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