Einfluss plastischer verformung auf die diffusion von gallium in germanium

Abstract

Joint plastic deformation of p-type and n-type germanium specimens leads to a mechanically firm linkage, that is to a p- n-junction. This p- n-junction was annealed and then subjected to further plastic deformation. The barrier layer capacitance was measured as a function of the biasing potential. From these measurements it is possible to calculate the distribution of impurity centers along the p- n-junction and thus the diffusion coefficient of the gallium. The diffusion coefficient is increased by plastic deformation. This effect cannot be explained by mechanical diffusion.