Abstract
Magnetic bubble shift register devices of 68 121- and 266 473-bit capacity have been fabricated and tested. The epitaxial garnet bubble films were nominally 1.7 μm thick, supported nominally 1.7-μm diameter bubbles, and had collapse fields of about 260 Oe. The storage area per bit was 64 μm2, which was realized with a minimum coded feature dimension of 1 μm and contact photolithography using EBES chrome masters. Initial yields obtained in two experimental batches each of the two chip capacities are discussed. Parametric test results are presented for generator current, transfer current and phase, and rotating field intensity. Nominal values have been established to be 130-mA generate current, 21-mA transfer current, and 60-Oe drive. The detector signals were about half as large as normally obtained from 3.3-μm bubble devices with comparable resistance and conventional design.
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