EHD-jet patterned MoS2 on a high-k dielectric for high mobility in thin film transistor applications

Abstract

Solution synthesis of MoS2 precursor followed by direct printing could be an effective way to make printed electronic devices. A linear MoS2 pattern was obtained by an electrohydrodynamic (EHD)-jet printer with a sol-gel system without chemical vapor deposition. The morphology of the MoS2 after a transfer process was maintained without wrinkles or cracking, resulting in a smooth surface compared with that of spin-coated films. EHD-jet printed MoS2 was transferred onto high-k dielectric Al2O3 and used as a semiconductor layer in thin film transistor (TFT) devices. The printed MoS2 TFT has relatively good electrical characteristics, such as a linear field effect mobility, current ratio, and low subthreshold swing of 47.64 2.99 cm2 V−1 s−1, 7.39 0.12 × 106, and 0.7 0.05 V decade−1, respectively. This technique may have promise for future applications.