Abstract
Ga-doped Gd3Fe5O12 (GIG) single-crystals with various doping concentration were successfully grown by the edge-defined film fed growth (EFG) technique. XRD pattern and SEM micrographs confirm that the as-grown crystal is in the single GIG phase with good crystal quality. The success of growing Ga:GIG crystal by using EFG method provide a new way to grow the single crystal of the incongruent melting compound. The magnetic parameters such as the Curie temperature Tc, the saturation magnetization Ms, the magnetic coercivity Hc, the magnetic saturation field Hs, the Faraday rotation angle of as-grown crystals were measured. After as-grown crystal was annealed at 800°C in oxygen atmosphere, the optical transmittance can be significantly enhanced. The reason for the change of the saturation magnetization Ms before and after annealing is also discussed.
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