Abstract

Efforts to improve a throughput of the IBAD-based biaxial substrate process are reported. IBAD-based biaxially textured substrates are now being typically fabricated at 1.2m/h for an IBAD-GZO layer and 6m/h for a CeO2 layer, respectively, in our laboratory. Since mass production is essential for commercialization, the production rate of IBAD process around 1m/h should be increased. In this work, we report a higher production rate of 1.5m/h with a 30m-piece sample by means of optimizing process conditions of multi-layered structure of IBAD and CeO2 layers. An in-plane alignment degree, Δϕ, of the substrate after CeO2 deposition obtained by X-ray ϕ-scan measurement was 4.6–5.8°. This level of texture can realize a high performance coated conductor with Ic×L=245A×212.6m as demonstrated by our group.

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