Abstract
By using n-butylamine as a carbon resource, carbon film is deposited onthe p-n porous silicon (PS) surface with a radio-frequency glow dischargeplasma system. Raman spectra and infrared reflection (IR) spectra of thecarbon films indicate that there are amine-group and hydrogen atoms therein.The IR spectra of the passivated PS samples exhibit that the PS surfaces aremainly covered with Si-C, Si-N and Si-O bonds. Electroluminescence (EL)spectra show that the EL intensity of the passivated PS diodes increases greatlyand the blueshift of the EL peak occurs compared with the diodes withouttreatment. Both of these are stable while the passivated diodes areexposed to the air indoors. The I-V characteristics reveal that thepassivated diodes have a smaller series resistance and a lower onsetvoltage. The influence of the carbon film passivation on EL properties ofPS has also been discussed. The results have proven thatcarbon film passivation is a good way to enhance the PS luminescentintensity and stability.
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