Efficient two-dimensional localization effect in a semiconductor quantum well

Abstract

The behavior of the two-dimensional (2D) localization effect is explored by monitoring the excitonic population in a three-level semiconductor quantum well under the action of two orthogonal standing-wave fields. Owing to the position-dependent quantum interference, the localization behavior is significantly improved due to the joint quantum interference induced by the standing-wave and pumping fields. Most importantly, the electron can be localized at a particular position and the maximal probability of finding the electron in one period of the standing-wave fields reaches unity by properly adjusting the system parameters. The proposed scheme may provide a promising way to achieve a high-precision and high-resolution 2D localization effect in a solid.