Abstract

The strong Lewis acid tin halide leads to an excessively fast crystallization rate, resulting in more defects in the film and degraded device performance. In this work, a cesium acetate (CsAc) pre-buried poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole transport layer acts as nucleation points during the crystallization of tin-based perovskite, which can induce preferential orientation growth of crystals and increase the grain size to improve the quality of crystallization. The addition of CsAc not only can increase the conductivity of PEDOT:PSS but also can improve the wettability of the perovskite precursor solution to enhance the interface contact between the hole transport layer and perovskite layer. Because of the incorporation of CsAc in PEDOT:PSS, the average short-circuit current density increases from 23.80 to 27.60 mA cm-2. Furthermore, a power conversion efficiency of 10.99% is achieved for a tin-based perovskite solar cell with CsAc-doped PEDOT:PSS as the hole transport layer.

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