Abstract
THz generation under the excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz radiation generation increases due to the resonant leaky mode excitation in nanowires. The THz generation mechanisms have been identified. It is shown that the efficiency of the terahertz generation at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs, which is the most effective THz emitter.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
