Abstract
The optical temperature sensing properties based on the β-Ga2O3:Er film were reported. Using a laser with 488 nm as an excitation source, the temperature-dependent behavior of the fluorescence intensity ratio of two green emissions at 524 nm and 550 nm corresponding to the thermal coupled energy levels of 2H11/2 and 4S3/2 was investigated in the temperature range of 77 K–400 K. The maximum absolute and relative sensitivities were found to be 0.003 K−1 at 400 K and 1031/T2. In comparison with the temperature sensor based on GaN:Er/Yb, the temperature sensor based on β-Ga2O3:Er without any sensitizer in this work can operate at higher temperatures. The thermal effect induced by the radiation of laser was also investigated, and the results show that the thermal effect induced by the pump power in this work can be negligible. These results suggest that the β-Ga2O3:Er film is a potential material for application in optical temperature sensing.
Highlights
In the cases of ceramics and other hosts, an additional sensitizer such as Yb3+ is required to realize the expected intensity in Er-based sensors due to the lack of defect bands.[8]
Studies show that other non-radiative transition paths can reduce the supply of electrons to the 2H11/2 and 4S3/2 states, which can affect the performance of temperature sensors.[16–18]
It is well known that the thermal stability of Er3+-related emission from Er-doped semiconductors is strongly dependent on the bandgap of the host.[19,20] β-Ga2O3 can be expected to be a promising host material for Er ions due to its wider bandgap (4.9 eV) than those of the aforementioned
Summary
In the cases of ceramics and other hosts, an additional sensitizer such as Yb3+ is required to realize the expected intensity in Er-based sensors due to the lack of defect bands.[8]. Studies show that other non-radiative transition paths can reduce the supply of electrons to the 2H11/2 and 4S3/2 states, which can affect the performance of temperature sensors.[16–18] It is well known that the thermal stability of Er3+-related emission from Er-doped semiconductors is strongly dependent on the bandgap of the host.[19,20] β-Ga2O3 can be expected to be a promising host material for Er ions due to its wider bandgap (4.9 eV) than those of the aforementioned
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