Abstract
Electro-quasistatic as well as electrostatic simulations of 3D high-voltage (HV) technical devices are presented using a symmetric coupled formulation of both the finite-element-method (FEM) and the boundary-element-method (BEM). This formulation allows for the specification of Dirichlet boundary conditions on the coupling interface. Accurate solutions can be achieved without the need of large spatial discretization domains. The use of the adaptive-cross-approximation (ACA) and a block Jacobi preconditioner for the linear system solver results in an efficient simulation scheme for numerical computations of electric field distributions of realistic 3D high-voltage devices.
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