Abstract
A mixture of supercritical carbon dioxide and a co-solvent was employed to strip a high-dose ion-implanted pho- toresist (HDIPR) from the surface of semiconductor wafers. The stripping efficiency was highly improved by the physical force generated from a ultrasonication tip inside the reactor. In addition, helium gas was injected in the reactor as a barrier gas before the introduction of pure supercritical CO2 (scCO2), which reduced the rinsing time significantly. The effect of co-solvents on the stripping efficiency was investigated. The wafer surfaces were analyzed by scanning electron microscopy and by an energy dis- persive X-ray spectrometer.
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