Efficient silicon heterojunction solar cells based onp- andn-type substrates processed at temperatures < 220°C

Abstract

We present the optimization and characterization of heterojunction solar cells consisting of an amorphous silicon emitter, a single crystalline absorber and an amorphous silicon rear side which causes the formation of a back surface field (a-Si:H/c-Si/a-Si:H). The solar cells were processed at temperatures 17% on p-type c-Si absorbers and >17·5% on n-type absorbers. In contrast to the approach of Sanyo, no additional intrinsic a-Si:H layers between the substrate and the doped a-Si:H layers were inserted. Copyright © 2006 John Wiley & Sons, Ltd.