Efficient sensitized photoluminescence of Er silicate in silicon oxide films embedded with amorphous silicon clusters, part I: fabrication

Abstract

We have investigated the structural evolution of Si-rich Er silicate films. Er silicate layers embedded with amorphous silicon (a-Si) clusters are formed upon the annealing above 1000 °C of Er-doped Si-rich SiO2 films with high Er concentrations. It is found that the crystallization of Er silicates annealed at higher temperatures leads to the disappearance of Si-NCs formed at 900 °C. On the other hand, the interface between Er silicate and embedded a-Si clusters increases the nucleation barrier for Si-NCs in these clusters. A two-step annealing process is utilized to obtain a fine structure and a good crystal quality of Er silicates at the same time, which will benefit the sensitized photoluminescence of Er silicates.