Efficient rhombohedral GeTe thermoelectrics for low-grade heat recovery

Abstract

The existence of Ge vacancy induces an inherently hole concentration up to 1021 cm−3 in pristine thermoelectric GeTe, which results in a need of ∼10 % aliovalent dopants for optimization. However, the extra carrier scattering by the dopants would notably deteriorate the carrier mobility. In this work, CuSbTe2-alloying is revealed to increase the formation energy of Ge-vacancy, leading to a rapid reduction in hole concentration down to 1.3 × 1020 cm−3 but with a mobility above 100 cm2/V-s. Along with a further Pb-substitution at Ge sites for lattice thermal conductivity reduction and band alignment, a peak figure of merit zT of ∼2.4 at 625 K is eventually realized in the rhombohedral structure, leading to a specific power density of as high as 70 W/m and a conversion efficiency of ∼10 % under a temperature difference of 302 K. This illustrates r-GeTe as truly efficient thermoelectrics particularly for low-grade heat recovery applications.