Abstract
Highly efficient red phosphorescent devices comprising a simple bi-layered structure using tris(1-phenylisoquinoline)iridium (Ir(piq)3) doped in a narrow band-gap fluorescent host material, bis(10-hydroxybenzo [h] quinolinato)beryllium complex (Bebq2) are reported. The driving voltage to reach 1000cd/m2 is 3.5V in Bebq2:Ir(piq)3 red phosphorescent device. With a dopant concentration of as low as 4%, the current and power efficiency values of 8.41cd/A and 7.34lm/W are obtained in this PHOLEDs, respectively. External quantum efficiency (EQE) of 14.5% is noticed in this red phosphorescent device, promising to high brightness applications.
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