Abstract
Quasi-two-dimensional (quasi-2D) perovskites with a multiple quantum well structure can enhance the exciton binding energy and controllable quantum confine effect, which are attractive materials for efficient perovskite light-emitting diodes (PeLEDs). However, the multiphase mixtures contained in these materials would cause nonradiative recombination at the perovskite film surface. Here, a facile solution surface treatment is adopted to improve the multiple quantum well structure of the quasi-2D perovskite emitting layer, which can reduce the influence of defectinduced nonradiative recombination and the electric-field-induced dissociation of excitons for the PeLEDs. The improved multiple quantum well structure is verified by UV absorption spectra and temperature-dependent photoluminescence spectra measurements. The photoluminescence quantum yield of the quasi-2D perovskite film with surface treatment has been approximately increased by 200%. Meanwhile, the electroluminescence device achieves a current efficiency of 45.9 cd/A.
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