Abstract
The publication reviews the technique of photoresist residue removal with 172nm excimer radiation. The emission principle of excimer lamps is explained as well as the multi-step cleaning mechanism with vacuum UV radiation (VUV cleaning). Based on this principle, the effect on actual photoresist molecules of wafer cleaning applications is shown. The removal rate for typical resists is plotted as a function of dose as well the SEM picture of a wafer before and after the treatment is presented. As a conclusion, the chances and possible limitations for the usage of this technique are presented.
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