Abstract
Co3O4/BiVO4 composite photocatalyst with a p-n heterojunction semiconductor structure has been synthesized by the impregnation method. The physical and photophysical properties of the composite photocatalyst have been characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transimission electron microscopy (TEM), BET surface area, and UV-visible diffuse reflectance spectra. Co is present as p-type Co3O4 and disperses on the surface of n-type BiVO4 to constitute a heterojunction composite. The photocatalyst exhibits enhanced photocatalytic activity for phenol degradation under visible light irradiation. The highest efficiency is observed when calcined at 300 degrees C with 0.8 wt % cobalt content. On the basis of the calculated energy band positions and PL spectra, the mechanism of enhanced photocatalytic activity has been discussed.
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