Abstract
Inverse lithography techniques (ILT) have been extensively used by the semiconductor industry to compensate for the inherent image distortions in optical lithography. However, the iterative ILT optimization procedure requires rather prohibitive time steps leading to poor efficiency with explicit time discretization. In this paper, a semi-implicit time discretization scheme is applied, enabling stable computation of mask synthesis with large time steps. Additive operator splittering (AOS) is implemented with respect to coordinate axes, reducing mask synthesis to consecutive one-dimensional updates represented by tridiagonal linear equations, which is solved efficiently by the Thomas algorithm. Simulation results merit the superiority of the proposed semi-implicit approach with improved convergence performance.
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