Efficient numerical simulation of GaAs MESFET's based on energy model and using interpolating wavelet

Abstract

A fast wavelet based non-uniform grid generation method is presented for time domain simulation of active semiconductor devices. The proposed approach solves the active part model of the semiconductor device. This approach is used to solve the non-linear equations of semiconductors on the self-adaptive grids, obtained by applying wavelet. Non-uniform mesh size is implemented and controlled by the wavelet coefficients. A fine mesh is used where the unknowns are varying rapidly and a coarser mesh where the unknowns are varying slowly. The energy model is considered for active layer of transistor and its results are compared with those of the classical drift diffusion model. Performance of this method is compared with the conventional finite difference on a uniform mesh. A reduction over 80 percent of unknowns in grid together with good accuracy in simulation is obtained using this non-uniform mesh while accurate physical behaviour of the device can be predicted. This represents an ongoing effort toward a numerical technique that uses wavelet to solve physical modelling problem of semiconductor devices. Copyright © 2006 John Wiley & Sons, Ltd.