Abstract
It has been demonstrated both theoretically and experimentally that it is possible to mode lock semiconductor lasers at millimeter wave frequencies approaching and beyond 100 GHz. The mode-locked output usually takes the form of sinusoidal modulation, and can be regarded for practical purposes as a highly efficient means of directly modulating an optical carrier in a narrow band at millimeter wave frequencies. In active mode locking, the external signal efficiently creates the optical modulation, while in passive mode locking a small external signal imposes its information on the optical carrier by injection locking the passive mode-locked output. Experimentally, we have demonstrated passive mode locking at 70 GHz using a tandem contact GaAs laser.
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