Abstract
For an efficient analysis of magnetization, a partial-implicit solution method is improved using an assembled domain structure model with six-domain mesoscopic particles exhibiting pinning-type hysteresis. The quantitative analysis of non-oriented silicon steel succeeds in predicting the stress dependence of hysteresis loss with computation times greatly reduced by using the improved partial-implicit method. The effect of cell division along the thickness direction is also evaluated.
Highlights
The magnetic degradation of core materials through mechanical stress[1,2,3] has been intensively studied recently because of the deterioration in motor performance it causes
For non-oriented (NO) silicon steel, the assembled-domain structure model (ADSM) successfully predicts the increase in hysteresis loss arising from compressive stress.[9]
To reveal the effect of surface poles on the magnetization property of a core material, the multiple-grain structure has to be represented by the ADSM having cell division along the normal direction (ND)
Summary
The magnetic degradation of core materials through mechanical stress[1,2,3] has been intensively studied recently because of the deterioration in motor performance it causes. To reveal the effect of surface poles on the magnetization property of a core material, the multiple-grain structure has to be represented by the ADSM having cell division along the ND. To accelerate the energy-minimization process for the ADSM, a partial-implicit scheme was proposed,[10] where the Jacobian matrix is reduced to a block-diagonal matrix to avoid full matrix inversions This partial-implicit scheme revealed the magnetization transition observed in a giant magneto-impedance thin-film element by configuring an assembly of two-domain mesoscopic cells based on the induced uniaxial anisotropy of the thin film. To treat the cubic anisotropy, the analysis of silicon steel requires six-domain mesoscopic cells, which increases the size of the diagonal blocks in the Jacobian matrix and requires extensive computations to execute the partial implicit scheme.
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