Abstract
The intraband term of the graphene electronic model is incorporated into Maxwell equations, and then the locally one-dimensional finite difference time domain (LOD-FDTD) method is applied to simulate graphene devices efficiently. Numerical results of the approach are compared with the explicit FDTD method. At Courant Friedrich Levy number (CFLN) equal to 100, the proposed approach is approximately 60% faster in terms of simulation time and with reasonable accuracy as compared to the FDTD method.
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