Abstract

An improved model for MESFET noise parameter prediction by using standard circuit simulator is proposed in this paper. Starting from the previously developed model with two noise sources, the correlation between these sources is included by using an additional model parameter complex correlation coefficient. A set of equation describing the noise parameters as the function of all model elements is derived. The proposed procedure is implemented within the circuit simulator Libra.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.