Efficient Memristor Model Implementation for Simulation and Application

Abstract

In this paper, we propose a novel Verilog-A based memristor model for effective simulation and application. Our proposed model captures desired nonlinear characteristics using voltage-based state control. This model is flexible and accurate, it can exhibit all the behaviors of HP memristive device and a general class memristive device resistive random access memory which is important in logic and memory design. Furthermore, we can antiserially connect two proposed models to capture the ideal ${I}$ – ${V}$ characteristics of complementary resistive switch (CRS). We demonstrate that our proposed CRS model-based crossbar arrays can significantly reduce sneak path currents with high noise margin compared to traditional memristor-based architectures.