Efficient lateral index guiding of II–VI laser structures by implantation-induced disordering

Abstract

Implantation-induced disordering in ZnCdSe-based quantum wells and superlattices is investigated and used to generate lateral index-guided laser structures. The structures are implanted with Nitrogen at doses of 1 × 10 154 × 10 15 cm −2 at energies ranging between 110 and 230 keV and subsequently annealed at temperatures up to 460°C in Zn-atmosphere. Distinct intermixing is identified by secondary-ion-mass-spectroscopy. Lateral selective implantation is performed by using stripe masks 5–30 μm wide. Lateral selectivity is proven by cathodoluminescence. Waveguiding of selectively implanted superlattices and laser structures is demonstrated by recording the near-field pattern. The implanted structures exhibit index guiding with and without subsequent annealing, demonstrating that index guiding is already achieved by the weak intermixing induced by implantation.