Abstract
We report on the continuous wave and passively Q-switched lasers in Nd:YAG ridge waveguides fabricated by a combination of swift Kr ion irradiation and femtosecond laser ablation. Owing to the deep penetration length (~50 μm) of 670 MeV Kr(8+) ions into the crystal, ridge waveguides with large-area cross section, supporting nearly symmetric guiding modes, were produced. Continuous wave lasers with maximum 182 mW output power at ~1064 nm have been realized at 808-nm optical pump. Using graphene as a saturable absorber, passively Q-switched waveguide laser operations were achieved. The pulsed laser produces 90 ns pulses, with a ~4.2 MHz repetition rate, 19% slope efficiency and 110 mW average output power, corresponding to single-pulse energy of 26.5 nJ.
Highlights
Compact pulsed lasers are significant to address demands for a variety of applications, ranging from spectroscopy, nonlinear frequency conversion and laser processing, to remote sensing, communication and medicine [1,2,3,4,5,6]
A number of materials could be emerged as SAs for the passively Q-switching, such as transition metal-doped crystals, semiconductor saturable absorber mirrors (SESAMs) and single-wall carbon nanotubes (SWNTs) [7,8,9]
We report on the lasing characteristics in both continuous wave (CW) and graphene Q-switched regimes of a 50 × 50 μm2 cross sectional Nd:YAG ridge waveguide, fabricated by the
Summary
A number of materials could be emerged as SAs for the passively Q-switching, such as transition metal-doped crystals, semiconductor saturable absorber mirrors (SESAMs) and single-wall carbon nanotubes (SWNTs) [7,8,9]. Graphene is an ideal alternative for ultra-broadband SAs. Pulsed lasers based on waveguide platforms as gain media permit compact cavity design with high beam quality and high optical intensities [19,20,21,22,23], which are intriguing light sources for on-chip integration [24]. We report on the lasing characteristics in both CW and graphene Q-switched regimes of a 50 × 50 μm cross sectional Nd:YAG ridge waveguide, fabricated by the combination of 670 MeV krypton (Kr8+) ion irradiation and fs laser ablation, supporting guided laser modes with nearly symmetric distribution
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