Abstract

AbstractThe photovoltaic performance of inverted (positive‐intrinsic‐negative) perovskite solar cells (PSCs) is predominantly limited by interfacial recombination loss. Here, by constructing a low‐dimensional halide/perovskite heterostructure, non‐radiative recombination pathways at the perovskite/C60 contact are effectively eliminated and a voltage loss of only 370 mV is achieved in inverted PSCs. Through molecular engineering of the organic spacer, a strong electronic coupling is enabled at the heterointerface, which effectively shifts the gap states out of the bandgap and leads to a prolonged carrier lifetime of 4.28 µs. Our strategy enables a power conversion efficiency of 24.09% (certified 23.54%) for inverted PSCs with an open‐circuit voltage of 1204 mV, and an efficiency of 21.89% (certified 21.48%) for centimeter‐scale cells. The devices retain 92% of the initial efficiency after 85 °C thermal aging for over 1400 h, and 95% of the initial efficiency after 1008 h of maximum power point operation under AM1.5G illumination in air.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.