Abstract
N-doped TiO2 film was deposited by RF reactive magnetron sputtering in a mixture gas of N2, O2 and Ar. The experimental results show that the crystal structure is anatase phase, and the concentration of substitutional nitrogen is 4.91at.% which leads to a narrow optical band gap of 2.65eV. The H2 production rate of the N-doped TiO2 film is about 601μmolg−1h−1, far higher than that of the undoped TiO2 film and even about 50 times higher than that of dispersive P25 powder.
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