Abstract

Hybrid solution process is a powerful liquid deposited strategy merging the advantage of molecular precursor solution and nanocrystals ink. A novel hybrid solution approach is presented to fabricate Cu(In,Ga)(S,Se)2 (CIGSSe) absorber layer using fully dissolved CIGS precursor solution and the CIGS nanocrystals. Such attractive strategy could significantly improve the single deposited thickness and enhance the quality of as-prepared CIGS film compared with the pure CIGS molecular precursor solution and the CIGS nanocrystals ink. Photovoltaic absorber layers based on CIGSSe chalcopyrite structure show the high-quality microstructural performance and are incorporated into solar cells with power conversion efficiency of 10.19%. The high performance of resulted optoelectronic devices represents a chance to extend the hybrid solution process to other inorganic semiconductor thin film solar cells.

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