Abstract

Quantum dots (QDs) offer an interesting alternative for traditional phosphors in on-chip light-emitting diode (LED) configurations. Earlier studies showed that the spectral efficiency of white LEDs with high color rendering index (CRI) values could be considerably improved by replacing red-emitting nitride phosphors with narrowband QDs. However, the red QDs in these studies were cadmium-based, which is a restricted element in the EU and certain other countries. The use of InP-based QDs, the most promising Cd-free alternative, is often presented as an inferior solution because of the broader linewidth of these QDs. However, while narrow emission lines are the key to display applications that require a large color gamut, the spectral efficiency penalty of this broader emission is limited for lighting applications. Here, we report efficient, high-CRI white LEDs with an on-chip color converter coating based on red InP/ZnSe QDs and traditional green/yellow powder phosphors. Using InP/ZnSe QDs with a quantum yield of nearly 80% and a full width at half-maximum of 45 nm, we demonstrate high spectral efficiency for white LEDs with very high CRI values. One of the best experimental results in terms of both luminous efficacy and color rendering performance is a white LED with an efficacy of 132 lm/W, and color rendering indices of R a ≈ 90 , R 9 ≈ 50 for CCT ≈ 4000 K . These experimental results are critically compared with theoretical benchmark values for white LEDs with on-chip downconversion from both phosphors and red Cd-based QDs. The various loss mechanisms in the investigated white LEDs are quantified with an accurate simulation model, and the main impediments to an even higher efficacy are identified as the blue LED wall-plug efficiency and light recycling in the LED package.

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