Abstract
AbstractBesides widely used surface passivation, engineering the film crystallization is an important and more fundamental route to improve the performance of all‐inorganic perovskite solar cells. Herein, we have developed a urea‐ammonium thiocyanate (UAT) molten salt modification strategy to fully release and exploit coordination activities of SCN− to deposit high‐quality CsPbI3 film for efficient and stable all‐inorganic solar cells. The UAT is derived by the hydrogen bond interactions between urea and NH4+ from NH4SCN. With the UAT, the crystal quality of the CsPbI3 film has been significantly improved and a long single‐exponential charge recombination lifetime of over 30 ns has been achieved. With these benefits, the cell efficiency has been promoted to over 20 % (steady‐state efficiency of 19.2 %) with excellent operational stability over 1000 h. These results demonstrate a promising development route of the CsPbI3 related photoelectric devices.
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