Abstract
The present study reports, for the first time, the highly efficient formation of barrier-type anodic films, with flat and parallel metal/film and film/electrolyte interfaces, on magnesium in ethylene glycol electrolytes containing ammonium fluoride and water. The anodizing voltage increases linearly with time during galvanostatic anodizing at 10Am−2 up to 350V. The anodic film formed to 200V is 247nm thick, containing a crystalline MgF2 phase. Analysis by Rutherford backscattering spectroscopy discloses the film composition of MgF1.8O0.1 and Pilling–Bedworth ratio (PBR) of 1.67. The PBR value greater than unity and the formation of chemically stable fluoride-based films may contribute to the film growth at high current efficiency.
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