Abstract
The efficient gettering to hydrogen-induced cavities in Si has been successfully demonstrated for low concentrations of Cu, unintentionally introduced during wafer processing. Secondary ion mass spectrometry showed up to 5×1012 cm−2Cu could be introduced into a silicon wafer and trapped at cavities. Neutron activation analysis indicated that, in samples with cavities, the Cu within the bulk was below the detection limit (around 4×1011 cm−2), while Cu was detected throughout the bulk of samples without cavities.
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