Efficient gate control of spin-valve signals and Hanle signals in GaAs channel with p–i–n junction-type back-gate structure

Abstract

Efficient gate control of spin-valve signals and Hanle signals was achieved in a GaAs channel with a p–i–n back-gate structure. Experiments showed that the amplitude of the spin-valve signal (ΔVNL) under constant-injection-current conditions increased for a cross nonlocal geometry when the channel was depleted by the gate voltage (VG). In contrast, the VG dependence of ΔVNL for a nonlocal geometry was complicated. The gate modulation efficiency of spin signals was approximately 50 times that with a graphene or Si channel.