Abstract

The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm is obtained. Our demonstration shows the huge potential of the AlGaAs-on-insulator platform in integrated nonlinear photonics.

Highlights

  • Desirable material properties for all-optical χ(3) nonlinear chips are a high Kerr nonlinearity and low linear and nonlinear losses to enable high four-wave mixing (FWM) efficiency and parametric gain

  • The dispersion distortion induced by inter-mode interaction between different mode families can be completely avoided, which is preferable for Kerr frequency comb generation but not attainable in all nonlinear material platforms[21]

  • The measured Q for all the devices ranges from 1.5×105 to 2.0×105, which is more than an order of magnitude higher than previously demonstrated Q for Aluminium gallium arsenide (AlGaAs) micro-ring resonators[22]

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Summary

Introduction

Desirable material properties for all-optical χ(3) nonlinear chips are a high Kerr nonlinearity and low linear and nonlinear losses to enable high four-wave mixing (FWM) efficiency and parametric gain. Due to two-photon absorption (TPA) at telecom wavelengths, e.g. 1550 nm, high parametric gain[15] and Kerr frequency comb generation[16] have only been achieved by pumping at wavelengths beyond 2000 nm.

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