Abstract
N-type WO3 and p-type Si can be assembled into a composite structure called “Z-scheme,” which is a high efficiency model for overall water splitting. However, due to the existence of Schottky barrier, its relatively low photocurrent density is still a great challenge for application. Here, a modified “Z-scheme” structure by inserting a W interlayer is presented. A great enhancement of photocurrent density over 10 times is achieved, which can be ascribed to the introduction of the ohmic contacts between W interlayer with both WO3 and Si layers and the elimination of Si-O bands at the interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
