Abstract
We investigate the highly efficient terahertz nonlinearity exhibited by n-type GaAs crystals under metallic metamaterials. An intense THz field applied to the metamaterials leads to impact ionization in the GaAs substrate, which emits electroluminescence in the near-infrared region. Even for a similar THz field strength, n-type GaAs emits near-infrared photons more efficiently than semi-insulating GaAs. We analyzed the luminescence lineshapes and intensity as a function of the excitation field strength, using Fermi–Dirac statistics and the density of states in the conduction band to quantify electron density and locate the Fermi level after the relaxation of excited hot electrons.
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