Efficient Electrical Transport Through Oxide‐Mediated InP‐on‐Si Hybrid Interfaces Bonded at 300 °C

Abstract

For complementary metal–oxide semiconductor processing compatibility, hybrid bonding of III–V materials on silicon should be operated below 300 °C, requiring an interfacial layer as thin as possible to not hamper the electrical transport through the interface. Both SiO2 and ZnO interfacial layers are investigated in the case of n‐InP/n‐Si hybrid heterostructures. Efficient electrical transport through oxide‐mediated bonded InP/Si heterostructures is demonstrated, related to tunneling through the oxide‐interfacial layer. These electrically operated oxide‐interfacial‐layer heterostructures provide both efficient bonding processing and open the field for full 3D design and operation of optoelectronic devices.