Abstract
In order to increase the radiative efficiency and directivity of spontaneous emission from a lattice-matched InGaAs/InP heterostructure, we have polished the substrate into a parabolic reflector. We combine optical and thermal measurements to obtain the absolute external efficiency over a wide range of carrier densities. Using a simple model, the measurement is used to determine interface, radiative, and Auger recombination rates in the active material. At the optimal density, the quantum efficiency exceeds 60% at room temperature. The divergence of the emitted light is less than 20°. In fact, the beam profile is dominated by a 6° wide lobe that can be swept across the field of emission by changing the excitation position. This suggests a way to create an all-electronic scanned light beam.
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