Efficient contact resistance extraction from individual device characteristics of graphene FETs

Abstract

Practical contact resistance extraction methods have been applied to fabricated graphene field-effect transistors from different technologies. In contrast to other characterization techniques which require either the fabrication of additional test structures or elaborated models requiring internal quantities and a few number of fitting parameters, the methods used here enable a straightforward extraction of contact resistance values from the electrical characteristics of individual devices within the linear transistor operation using a drift-diffusion approach. Results are validated with other experimental characterization methods and with sophisticated models.