Abstract
ABSTRACTCdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique. CdSe QWs with a well width of 1.05 nm emitted blue light at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. It was found that a 3-monolayer ZnS outer cladding layer can effectively passivate the QDQW structures, leading to a ∼35% quantum yield (QY) of the QW photoluminescence. QDQW light-emitting diodes (LEDs) with blue QW electroluminescence (EL) were fabricated. The devices with an emitting layer comprising QDQWs embedded in a poly(N-vinylcarbazole) host were five times brighter than LEDs based on closely-packed QDQWs. However, the overall EL of the devices was dominated by interface state emission due to poor charge injection into the QDQWs.
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