Abstract
Two-dimensional (2D) materials with intrinsic atomic-level thicknesses are strong candidates for the development of deeply scaled field-effect transistors (FETs) and novel device architectures. In particular, transition-metal dichalcogenides (TMDCs), of which molybdenum disulfide (MoS2) is the most widely studied, are especially attractive because of their non-zero bandgap, mechanical flexibility, and optical transparency. In this contribution, we present an efficient full-wave model of MoS2-FETs that is based on (1) defining the constitutive relations of the MoS2 active channel, and (2) simulating the 3D geometry. The former is achieved by using atomistic simulations of the material crystal structure, the latter is obtained by using the solver COMSOL Multiphysics. We show examples of FET simulations and compare, when possible, the theoretical results to the experimental from the literature. The comparison highlights a very good agreement.
Highlights
Mono-layer transition metal dicalchogenides are chemical compounds in which molecules are formed by one transition metal atom (Mo, W, Pt, etc.) and two atoms belonging to group 16 of the periodic table of elements (S, O, Pt)
Cao et al reported a model of field-effect transistors (FETs) realized for monolayer transition-metal dichalcogenides (TMDCs), considering interface traps, mobility degradation and inefficient doping effects [13]; in literature [14] it is possible to find a simulation study of a MoS2 FET for analog circuits; Zhang et al illustrated another approach to model MoS2 FETs in [15], completed with a comparative study between complementary metal oxide semiconductor (CMOS) FETs and MOS2 -FETs
We introduce a full-wave a model of a MoS2 -based FET, by using COMSOL
Summary
Mono-layer transition metal dicalchogenides are chemical compounds in which molecules are formed by one transition metal atom (Mo, W, Pt, etc.) and two atoms belonging to group 16 of the periodic table of elements (S, O, Pt). MoS2 -FETs have been broadly studied by the literature, providing important and promising experimental data showing how these devices behave ([10,11,12]). From a design point of view, it is important to establish numerical methods that can predict the electrical properties of MoS2 based FETs. Cao et al reported a model of FET realized for monolayer TMDCs, considering interface traps, mobility degradation and inefficient doping effects [13]; in literature [14] it is possible to find a simulation study of a MoS2 FET for analog circuits; Zhang et al illustrated another approach to model MoS2 FETs in [15], completed with a comparative study between CMOS FETs and MOS2 -FETs
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